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Electrical Parameters for CIGS Thin-Film Solar Cell Fabricated using ZnO Buffer Layer

Author(s) Mr. Satyendra Kumar, Dr. Swati Arora
Country India
Abstract Abstract: In this study, investigation electrical parameters of the ZnO thin film characteristics deposited in between transparent conductive oxide
and the CdS films layers in a CIGS solar cell (AZO/ZnO/CdS/CIGS/Mo),of various thicknesses have been deposited by the solution-based
fabrication technique to get better performance of CIGS thin-film solar cells. The exchange efficiency of CIGS solar cell depends on ZnO thin film.
There is significant work and progresses have seen in photovoltaic (PV) for alteration of solar energy into electrical energy and its storage. For 80
nm curve has the highest Fill Factor 30.35% which means it maintains a higher current as the voltage increases before dropping toward zero at Voc.
Voc decrease because of force path in solar cell. This consequence the direct drop a line among the CIGS and AZO layer ensuing large band gap
change and as a result with hammering of open circuit voltage. Short-circuit current density (Jsc) increases as compare through without ZnO film
and among ZnO film less than 80 nm since enhanced mobility and advanced transmittance with visible area. Short-circuit current density (Jsc)
decrease evenly with decrease in thickness of ZnO film greater than 80 nm outstanding to chain resistance of film. CIGS solar cell analogous
performance has been experiential and fill factor is exaggerated through series and parallel resistance. When ZnO film width improved up and about
80 nm, it amplified fill factor of the cell due to parallel path configuration is prohibited. on the other hand, the fill factor decrease evenly as thickness
of ZnO film has greater than before 120 nm with increase in solar cell series resistance.
Keywords Thin-film, Photo Voltaic, exchange efficiency, transmittance, current density ,CIGS solar cell.
Field Engineering
Published In Volume 17, Issue 1, January-March 2026
Published On 2026-01-18
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