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Synthesis and Study of Electrical Properties of CuO thick films

Author(s) Nima P. Golhar
Country India
Abstract The study of electrical properties of metal oxide semiconductors (MOS) is essential due to their widespread applications in various advanced technologies, particularly in sensors, optoelectronic devices, and energy-related systems. Metal oxide semiconductors such as CuO, ZnO, SnO2, and other MOS exhibit unique electrical behaviors that are highly sensitive to external stimuli like temperature, gas environment, and light, making them ideal candidates for gas sensors, thermistors, and photodetectors. Understanding parameters like resistivity, temperature coefficient of resistance (TCR), and activation energy provides insights into their conduction mechanisms and allows for the optimization of their performance in specific applications. In the present study, copper oxide (CuO) nanoparticles were synthesized using the precipitation method. Thick films of CuO were subsequently developed on glass substrates via the screen printing technique. The primary objective of this work was to investigate the electrical properties of CuO thick films, which are of significant importance in the field of nanotechnology, particularly for metal oxide-based sensor applications. The electrical behavior of the fabricated films was analyzed using the half-bridge method. Key electrical parameters such as resistivity, temperature coefficient of resistance, and activation energy were systematically evaluated. The thickness of films was estimated using mass or weight difference method and thickness was found to be 67 µm. The CuO thick films exhibited a resistivity of 358593.5 Ω•m, a negative TCR of -0.00188°C⁻¹, and an activation energy of 0.2086 eV, indicating their potential for temperature-sensitive electronic applications.
Field Engineering
Published In Volume 14, Issue 1, January-March 2023
Published On 2023-01-11
Cite This Synthesis and Study of Electrical Properties of CuO thick films - Nima P. Golhar - IJSAT Volume 14, Issue 1, January-March 2023. DOI 10.5281/zenodo.15282070
DOI https://doi.org/10.5281/zenodo.15282070
Short DOI https://doi.org/g9gpv4
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