Wide Bandgap GaN Devices for Electric Vehicles: Advancing Power Conversion and Efficiency

Author(s)	Mr. Rohit Vasant Patil, Dr. Manoj Dhondiram Patil
Country	India
Abstract	The evolution of electric vehicles (EVs) has intensified the need for highly efficient, compact, and thermally robust power electronics. Gallium Nitride (GaN), as a wide bandgap semiconductor, offers a promising alternative to traditional silicon devices by enabling high-speed switching, low conduction losses, and reduced thermal footprints. This paper presents a comprehensive analysis of GaN device fundamentals, EV-specific applications, implementation challenges, modeling methodologies, and the current commercial landscape. Future research trajectories including vertical GaN, monolithic integration, and advanced cooling strategies are also outlined to support the next generation of sustainable mobility platforms.
Keywords	GaN, electric vehicles, wide bandgap semiconductors, power converters, high efficiency, traction inverter, thermal management.
Field	Engineering
Published In	Volume 16, Issue 3, July-September 2025
Published On	2025-07-24
DOI	https://doi.org/10.71097/IJSAT.v16.i3.7226
Short DOI	https://doi.org/g9vdcz

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