International Journal on Science and Technology

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Experimental Investigation of Entirely Detached Growth in Vertical Directional Solidification and Crystallization Evolution

Author(s) Dr. Dattatray Gadkari
Country India
Abstract Vertical Directional Solidification (VDS) process produces entirely detached, diffusion-controlled crystallization of Sb-based III–V alloys, binary - InSb, GaSb, doped derivatives, ternary In(1-X)GaXSb, and In0.5Ga0.5Sb alloys under fully terrestrial conditions. Establishing a vapor-rich, pressure-compensated melt environment and the axial gradients (10–32 °C·cm⁻¹), by naturally suppresses buoyancy-driven flow and shear stress at the ampoule boundary. This creates a quasi-equilibrium vapor–melt–crystal domain where solute transport becomes overwhelmingly governed by thermodiffusion and diffusion, yielding a stable, thick diffusion boundary layer. VDS experimental results reveal uniform compositions (Δx < 0.01), insignificant segregation, and high structural perfection (FWHM 49–128 arcsec). Entire interface detachment attained across all compositions eliminates wall-induced perturbations and establishes the classical Concave → Planar → Convex meniscus alike crystallization obtained in space growth or in microgravity. Quantitative evaluation of thermal diffusion, diffusion fluxes, interface thermodynamics, and detachment parameters confirms repeats (~80 runs) of the transport physics of solidification. VDS results constitutes a dynamic terrestrial crystallization, enabling superior morphological stability, controlled solute redistribution, and exceptional crystalline quality.
Keywords Vertical Directional Solidification (VDS); Sb-Based III–V Alloys; Entire Detachment; Thermodiffusion; Quasi-Microgravity; Diffusion-Controlled Growth;
Field Physical Science
Published In Volume 17, Issue 1, January-March 2026
Published On 2026-01-22
DOI https://doi.org/10.71097/IJSAT.v17.i1.10166
Short DOI https://doi.org/hbmh3d
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