International Journal on Science and Technology

E-ISSN: 2229-7677   •   Impact Factor: 9.88

A Widely Indexed Open Access Peer Reviewed Multidisciplinary Bi-monthly Scholarly International Journal

Call for Paper Volume 17 Issue 2 April-June 2026 Submit your research before last 3 days of June to publish your research paper in the issue of April-June.
Submit Research Paper Join as a Reviewer

Plagiarism is checked by the leading plagiarism checker TurnItIn

Call for Paper

Volume 17 Issue 2
April-June 2026

Submit your research paper

Indexing Partners
Academia Advanced Sciences Index Bielefeld Academic Search Engine CiteSeer DRJI Google Scholar Independent Search Engine & Directory Network ISI (International Scientific Indexing) Issuu Mendeley Research Networks
RefSeek ResearcherId - Thomson Reuters ResearchGate Scirus Scribd Semantic Scholar UTeM - Universiti Teknikal Malaysia Melaka Wiki for Call for Papers WorldCat Zenodo

Advancing Research in Semiconductor Devices and Materials

Author(s) Komal Arun Baviskar
Country India
Abstract Semiconductor devices and materials form the technological foundation of modern electronics, enabling advancements in computing, communication, energy, and intelligent systems. As conventional silicon-based complementary metal–oxide–semiconductor (CMOS) technology approaches fundamental scaling, power, and thermal limits, the need for innovative materials, architectures, and integration strategies becomes increasingly critical. This study provides a comprehensive overview of emerging trends in semiconductor research, encompassing advanced materials such as III–V compounds, germanium, and two-dimensional (2D) materials; novel device architectures including FinFETs, gate-all-around (GAA) transistors, and tunnel field-effect transistors (TFETs); and fabrication, characterization, and reliability considerations. The work further explores heterostructures, quantum and neuromorphic computing implications, simulation and data-driven design methodologies, and cross-cutting challenges related to power management and scalability. Ethical, environmental, and economic dimensions of semiconductor innovation are also examined. The analysis highlights that sustained progress in semiconductor technology requires interdisciplinary collaboration, integration of emerging materials, advanced modeling frameworks, and sustainability-oriented design approaches to meet future technological and societal demands.
Keywords Semiconductor devices; CMOS technology; Two-dimensional (2D) materials; Heterostructures; FinFET; Gate-all-around (GAA) transistor; Tunnel FET (TFET).
Field Physics
Published In Volume 17, Issue 1, January-March 2026
Published On 2026-03-31
View / Download PDF File

Share this


CrossRef

CrossRef DOI is assigned to each research paper published in our journal.

IJSAT DOI prefix is
10.71097/IJSAT

Downloads
Research Paper Format Copyright Permission Form and Undertaking Form Cover Page Vol 17 Isu 1Cover Page Vol 16 Isu 3Cover Page Vol 16 Isu 2

All research papers published on this website are licensed under Creative Commons Attribution-ShareAlike 4.0 International License, and all rights belong to their respective authors/researchers.

CC-BY-SA Open Access

About IJSAT
Fees & Payment
Current Issue
Publication Archive 		Submit Research Paper
Track Submission Status
Publication Guidelines
Publication Ethics
Peer Review & Plagiarism 		Join as a Reviewer
Editors & Reviewers
Reviewer Referral Program
Get Reviewer Membership Certi. 		Website/Journal Policies
Usage Policy
Content Policies
Privacy Policy
Contact Us Message on WhatsApp +91-9687-182-185 editor@ijsat.org